No | Part number | Description ( Function ) | Manufacturers | |
3 | BLW86 | HF/VHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabili |
NXP Semiconductors |
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2 | BLW86 | NPN SILICON RF POWER TRANSISTOR BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System E C Ø.125 NOM. FULL R J .125 B C D F E E MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.0 |
ASI |
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1 | BLW86 | Trans GP BJT NPN 36V 4A 4-Pin SOT-123A |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |