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BLH3356B PDF Datasheet

The BLH3356B is High-frequency Low-noise NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BLH3356B
High-frequency low-noise NPN transistor

BLH3356B 高频低噪声 NPN 晶体管 描述: 硅外延 NPN 晶体管 应用: 高频低噪声放大,用于 VHF,UHF 和 CATV 工作条件(T=25℃): 参数 BC 击穿电压 EC 击穿电压 EB 击穿电压 集电极电流 功耗 结温度 存储温度 符合 VCBO VCEO VEBO IC PC Tj Tstg 极值 20 12 3 200 0.5 150 -65-+150 单位 V V V mA W ℃

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SHANGHAI BELLING
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Recommended search results related to BLH3356B

Part No Description ( Function) Manufacturers PDF
BLH3356   High-frequency low-noise NPN transistor

BLH3356 高频低噪声 NPN 晶体管 描述: 描述: BLH3356 是一种低噪声和高功率增益的硅外延 NPN 晶体管。 应用: 应用: 高频低噪声放大 工作条件 (T=25℃ T=25℃) 参数 BC 击穿电压 EC 击穿电压 EB 击穿电压 集�

SHANGHAI BELLING
SHANGHAI BELLING
datasheet pdf
2SC3356   MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current char

NEC
NEC
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2SC3356   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low

Unisonic Technologies
Unisonic Technologies
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2SC3356   NPN Silicon Epitaxial Transistor

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3

Kexin
Kexin
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2SC3356   Silicon NPN RF Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLIC

Inchange Semiconductor
Inchange Semiconductor
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