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BLH3355 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 BLH3355
NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×

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BLH33 Data sheets

Part No Description ( Function) Manufacturers PDF
BLH3355   NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier

SHANGHAI BELLING
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datasheet pdf
BLH3356B   High-frequency low-noise NPN transistor

BLH3356B 高频低噪声 NPN 晶体管 描述: 硅外延 NPN 晶体管 应用: 高频低噪声放大,用于 VHF,UHF 和 CATV 工作条件(T=25℃): 参数 BC 击穿电压 EC 击穿电压 EB 击穿电压 集电极电流 功耗 结温度 存储温

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datasheet pdf
BLH3356   High-frequency low-noise NPN transistor

BLH3356 高频低噪声 NPN 晶体管 描述: 描述: BLH3356 是一种低噪声和高功率增益的硅外延 NPN 晶体管。 应用: 应用: 高频低噪声放大 工作条件 (T=25℃ T=25℃) 参数 BC 击穿电压 EC 击穿电压 EB 击穿电压 集

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