No | Part number | Description ( Function ) | Manufacturers | |
3 | BGB540 | Active Biased RF Transistor Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and sha |
Infineon Technologies AG |
|
2 | BGB540 | A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and sha |
Infineon Technologies AG |
|
1 | BGB540LNA | BGB540 as a 1.85 GHz Low Noise Amplifier %*% /1$ 6LOLFRQ 'LVFUHWHV %*% DV D *+] /RZ 1RLVH $PSOLILHU 9FF ID IBias 5 0Ω IC 120pF & 10nF & 2.7kΩ 5 / 1.8nH 10Ω 4 3 5 Out In 0Ω 5 18pF 1 2 & BGB540 ,& 2.2pF & 5.6nH / )LJXUH 7DEOH 3DUDPHWHU $SSOLFDWLRQ &LUFXLW 'LDJUDP 0HDVXUHG 3HUIRUPDQFH 'DWD DW 0+] DQG 9&& 6PERO ICC |S21| NF |S11|2 |S22| 2 2 9 8QLW mA dB d |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |