No | Part number | Description ( Function ) | Manufacturers | |
1 | BF1205C | Dual N-channel dual gate MOS-FET BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal |
NXP Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to BF1205C |
Part No | Description ( Function) | Manufacturers | |
BF1205 | Dual N-channel dual gate MOS-FET DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a s |
NXP Semiconductors |
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1N1205 | SILICON POWER RECTIFIER 1N1199(A,B)-1N1206(A,B) High-reliability discrete products and engineering services since 1977 SILICON POWER RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-R |
Digitron Semiconductors |
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1N1205A | Silicon Power Rectifier |
Microsemi Corporation |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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