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BF1009S PDF Datasheet

The BF1009S is SilICon N-channel MOSFET Tetrode, SilICon N-channel MOSFET Tetrode (for Low. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
4 BF1009S
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drai

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
3 BF1009S
Silicon N-Channel MOSFET Tetrode

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=

Infineon Technologies AG
Infineon Technologies AG
pdf
2 BF1009SR
Silicon N-Channel MOSFET Tetrode

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=

Infineon Technologies AG
Infineon Technologies AG
pdf
1 BF1009SW
Silicon N-Channel MOSFET Tetrode

BF1009SW Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled 3 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009SW Maximum Ratings Parameter Drain-source voltage Marking JLs

Infineon
Infineon
pdf

[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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