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Datasheet BDX33B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDX33B | NPN/PNP PLASTIC POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D
TO-220 Plastic Package
Power Darlington for Linear Switchilng Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
|  CDIL | transistor |
| 2 | BDX33B | NPN Silicon Power Darlingtons MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
% !"#
BDX33 THRU BDX33D
0,9:708 • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Desig |  MCC | data |
| 3 | BDX33B | Darlington Complementary Silicon Power Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX33B/D
Darlington Complementary Silicon Power Transistors
. . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage a |  Motorola Inc | transistor |
| 4 | BDX33B | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAd |  ON Semiconductor | transistor |
| 5 | BDX33B | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ®
BDX33B BDX33C BDX34B BDX34C
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switchi |  STMicroelectronics | transistor |
BDX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDX10 | Bipolar NPN Device
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19  Seme LAB data | | |
| 2 | BDX11 | Bipolar NPN Device BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 3 | BDX12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDX14 | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 5 | BDX14A | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS ·Designed for LF Large Signal Power Amplification
and Medium Current Switching
 Inchange Semiconductor transistor | | |
| 6 | BDX14A | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 7 | BDX14AA | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | |
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