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Datasheet BDT85 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BDT85 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A www.datasheet4u.com ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type | Inchange Semiconductor | transistor |
2 | BDT85 | SILICON POWER TRANSISTOR
NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP complements are BDT82 | Comset Semiconductors | transistor |
3 | BDT85F | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A www.datasheet4u.com ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to T | Inchange Semiconductor | transistor |
BDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BDT41 | Silicon Epitaxial Base Power Transistors ETC transistor | | |
2 | BDT60 | PNP SILICON POWER DARLINGTONS New Jersey Semi-Conductor data | | |
3 | BDT60 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·C Inchange Semiconductor transistor | | |
4 | BDT60 | PNP SILICON POWER DARLINGTONS BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at Power Innovations Limited data | | |
5 | BDT60 | PNP SILICON POWER DARLINGTONS TRSYS data | | |
6 | BDT60A | PNP SILICON POWER DARLINGTONS New Jersey Semi-Conductor data | | |
7 | BDT60A | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·C Inchange Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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