BD9 PDF Datasheet Search Results |
No | Part number | Description ( Function ) | Manufacturers | |
374 | BD900 | PNP SILICON POWER DARLINGTONS |
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373 | BD900 | PNP SILICON POWER DARLINGTONS BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact |
![]() Power Innovations Limited |
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372 | BD900 | (BD900 / BD902) SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD895/897/899/901 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION B |
![]() SavantIC |
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371 | BD900 | (BD900 / BD902) Silicon PNP Power Transistors Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type BD895/897/899/901 ¡¤DARLINGTON APPLICATIONS ¡¤For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896/898/900 |
![]() Inchange Semiconductor |
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370 | BD900 | (BD900 / BD902) Silicon NPN Power Transistors SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS. A |
![]() Comset Semiconductors |
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369 | BD9001F | Flexible Step-Down Switching Regulator Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request th |
![]() ROHM Semiconductor |
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