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Datasheet BD8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 256 | BD800 | EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
 Intersil Corporation |
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| 255 | BD801 | Plastic High Power Silicon NPN Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD801/D
Plastic High Power Silicon NPN Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is compleme |
 Motorola Inc |
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| 254 | BD801 | EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil Corporation |
|
| 253 | BD802 | Plastic High Power Silicon PNP Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD802/D
Plastic High Power Silicon PNP Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is compleme |
Motorola Inc |
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