MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD135/D Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140 BD135 BD137 BD139 1.5 AMPERE POWER

BD135 BD137 BD139 NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuit

UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current (max.1.5A) *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current(DC) Peak collector

Elektronische Bauelemente BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High current Complement to BD136, BD138 and BD140 CLASSIFICATION OF hFE (1) Product-Rank BD135-6 BD135-10 Product-Rank BD137-6 BD137-10 Product-Rank BD139-6 BD139-10 Range 40~100 63~160 BD135-16 BD13