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Datasheet BD115 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BD115 | Bipolar NPN Device BD115
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO |
 Semelab |
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| 2 | BD115 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER 10*** 10*** 10*** 0.25 0.30 10 10 10 10 0.10** 0.10** 0.10** 0.10** 0.02 0.02 0.02 0.02 0.02 0.10 0.10 0.10 0.10 0.02** 0.02** 550* 0.01 50 50 50 100**** 0 |
 Central Semiconductor |
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| 1 | BD115 | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR Transys
Electronics
L I M I T E D
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BD115 TO-39 Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Collector Base Voltage Emitter Base Voltage Collecto |
 TRANSYS |
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