No | Part number | Description ( Function ) | Manufacturers | |
1 | BCW68FR | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N BCW68 C B E COMPLEMENTARY TYPES – BCW66 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current(10ms) Continuous Collect |
Zetex Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to BCW68FR |
Part No | Description ( Function) | Manufacturers | |
BCW67BCW68 | PNP Silicon AF Transistors (For general AF applications High current gain) PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H Marking DAs DBs DCs DFs DGs DHs Orderi |
Siemens Semiconductor Group |
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BCW68 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N BCW68 C B E COMPLEMENTARY TYPES – BCW66 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitte |
Zetex Semiconductors |
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BCW68 | PNP Silicon AF Transistors BCW67, BCW68 PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN) 3 2 1 VPS05161 Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H Maximum Ratings Parameter Marking DAs D |
Infineon Technologies AG |
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BCW68 | Surface mount Si-Epitaxial PlanarTransistors BCW 67, BCW 68 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäus |
Diotec Semiconductor |
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BCW68 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO •c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol •Total Device ADiss |
Motorola Semiconductors |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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