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Datasheet BCV29 Equivalent ( PDF ) |
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| 4 | BCV29 | NPN Darlington transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCV29; BCV49 NPN Darlington transistors
Product specification Supersedes data of 1997 Apr 21 1999 Apr 08
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES • High current (max. 500 mA) • Low voltage (m |
 NXP Semiconductors |
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| 3 | BCV29 | NPN SILICON PLANAR DARLINGTON TRANSISTOR SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCV28 EF
BCV29
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Curr |
 Zetex Semiconductors |
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| 2 | BCV29 | NPN Silicon Darlington Transistors (For general AF applications High collector current) NPN Silicon Darlington Transistors
BCV 29 BCV 49
For general AF applications q High collector current q High current gain q Complementary types: BCV 28, BCV 48 (PNP)
q
Type BCV 29 BCV 49
Marking EF EG
Ordering Code (tape and reel) Q62702-C1853 Q62702-C1832
Pin Configuration 1 2 3 4 B C E C
Pa |
 Siemens Semiconductor Group |
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| 1 | BCV29 | NPN Silicon Darlington Transistors NPN Silicon Darlington Transistors
• For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCV29, BCV49
1 2 3
2
Type BCV29 BCV49
Marking EF EG
Maximum Rati |
 Infineon Technologies AG |
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