| No | Part number | Description ( Function ) | Manufacturers | |
| 7 | BCV26 | PNP Darlington transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where ver |
 NXP Semiconductors |
|
| 6 | BCV26 | PNP SILICON PLANAR DARLINGTON TRANSISTORS SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat) VBE(sat) -100 -1.0 -1.5 4K 10K 20K 4K 200 Typical 4.5 Typical -100 -10 -100 -1. |
 Zetex Semiconductors |
|
| 5 | BCV26 | PNP Silicon Darlington Transistors (For general AF applications High collector current) PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base |
 Siemens Semiconductor Group |
|
| 4 | BCV26 | PNP Darlington Transistor BCV26 Discrete POWER & Signal Technologies BCV26 C E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - |
 Fairchild Semiconductor |
|
| 3 | BCV26 | PNP Silicon Darlington Transistors BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 3 2 1 VPS05161 Type BCV26 BCV46 Maximum Ratings Parameter Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BCV26 30 40 10 BCV46 60 80 10 Unit V Collector |
 Infineon Technologies AG |
|
| 2 | BCV26 | Surface mount Si-Epitaxial PlanarTransistors BCV26, BCV46 PNP Darlington Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Version 2004-01-20 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material h |
 Diotec Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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