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Datasheet BC808-40 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BC808-40 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807 BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC | CDIL | transistor |
2 | BC808-40 | PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818
ORDERING INFORMATION
Ordering Number
Package
Note:
BC807G-xx-AE3-R BC807G-xx-AL3- | Unisonic Technologies | transistor |
3 | BC808-40 | PNP General Purpose Transistor PNP General Purpose Transistor
BC808
FEATURES
• Suitable for AF-Driver stages and low power output
stages
MECHANICAL DATA
• Case: SOT-23 Plastic • Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant
Ma | LITE-ON | transistor |
4 | BC808-40 | PNP General Purpose Amplifier BL Ga
PNP General Purpose Amplifier
FEATURES
z High collector current. z High current gain. z Low collector-emitter stauration voltage. z Complementary types:BC818.
Pb
Lead-free
Production specification
BC808-16/-25/-40
ORDERING INFORMATION
Type No.
Marking
BC808-16 BC808-25 BC808-40
5E 5F | Galaxy Microelectronics | amplifier |
5 | BC808-40 | PNP Silicon AF Transistor PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type:
BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BC807.../BC808...
Typ | Infineon | transistor |
BC8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BC807 | Silicon PNP transistor BC807
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
IC 大,与 BC817 互补。 High IC ,complementary pair with BC817.
用途 / Applications 用于一般功率放大及开关 FOSHAN BLUE ROCKET transistor | | |
2 | BC807 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BC817.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
-50 -45
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -800
KEC transistor | | |
3 | BC807 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807 BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC CDIL transistor | | |
4 | BC807 | PNP Silicon Epitaxial Planar Transistors BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended.
SOT-23 Plastic SEMTECH transistor | | |
5 | BC807 | PNP general purpose transistor BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC807
SOT23
BC807W
SOT323
BC327[1]
SOT54 (TO- NXP Semiconductors transistor | | |
6 | BC807 | PNP SURFACE MOUNT TRANSISTOR TRSYS transistor | | |
7 | BC807 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ
BC807
E
C B
COMPLEMENTARY TYPE
BC817 SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak P Zetex Semiconductors transistor | |
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