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BC635 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
9 BC635
SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Bas

CDIL
CDIL
pdf
8 BC635
NPN Type Plastic Encapsulate Transistors

Elektronische Bauelemente BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor FEATURE High current transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 4.5±0.2 14.3±0.2 0.4 6+–00..11 0.43+–00..0078 (1.27 Typ). 123 1.25+–00..22 2.54±0.1 1: Emitter 2: Collector 3: Base MAXIMUM RATINGS (TA=25 o

SeCoS
SeCoS
pdf
7 BC635
NPN Silicon Epitaxial Planar Transistor

ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temper

SEMTECH
SEMTECH
pdf
6 BC635
NPN Silicon AF Transistors (High current gain High collector current)

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
5 BC635
NPN medium power transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers. DES

NXP
NXP
pdf
4 BC635
NPN EPITAXIAL SILICON TRANSISTOR

BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : B

Fairchild Semiconductor
Fairchild Semiconductor
pdf



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