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Datasheet BC338 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BC338 | NPN General Purpose Transistor NPN General Purpose Transistor
P b Lead(Pb)-Free
BC337/BC338
COLLECTOR 1
2 BASE
3 EMITTER
TO-92
1 2 3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Symbol
BC337
BC338
Collector-Base voltage
VCBO
50
30
Collector-Emitter voltage
VCEO
45
25
Emitter-Base voltage
VEBO
5.0
5. |  WEITRON | transistor |
| 2 | BC338 | NPN Plastic-Encapsulate Transistors Elektronische Bauelemente
BC337/BC338
NPN Plastic-Encapsulate Transistors
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Power dissipation
PCM : 0.625 W Tamb=25 Collector current
ICM : 0.8 A
Collector-base voltage
V(BR)CBO : BC337 50 BC338 30
V
1 23
TO-92
1 |  SeCoS | transistor |
| 3 | BC338 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 5 |  JCET | transistor |
| 4 | BC338 | SWITCHING AND AMPLIFIER APPLICATIONS BC337/338
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage : BC3 |  Fairchild Semiconductor | amplifier |
| 5 | BC338 | Amplifier Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
BC337,-16,-25,-40 BC338,-16,-25,-40
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base V |  Motorola Inc | transistor |
BC3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BC3.5 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BC300 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO  CDIL transistor | | |
| 3 | BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 4 | BC301 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 5 | BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 6 | BC302 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 7 | BC302 | Bipolar NPN Device BC302
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 45V
5.08 (0.200) typ.
IC  Seme LAB data | |
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