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BC337 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
50 BC337
SWITCHING AND AMPLIFIER APPLICATIONS

BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC337 : BC338 VCEO Collector-Emitter Voltage : BC337 : BC338 VEBO IC PC TJ TSTG

Fairchild Semiconductor
Fairchild Semiconductor
pdf
49 BC337
Small Signal Transistors (NPN)

BC337, BC338 Small Signal Transistors (NPN) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. ♦ These types are also available

General Semiconductor
General Semiconductor
pdf
48 BC337
Si-Epitaxial PlanarTransistors

BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE Plastic case Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0

Diotec Semiconductor
Diotec Semiconductor
pdf
47 BC337
NPN Transistors

DIP Type NPN Transistors BC337 (KC337) Transistors TO-92 4.58 +0.25 –0.15 Unit: mm 4.58 0.20 ■ Features ● Collector Current Capability IC=0.5A ● Collector Emitter Voltage VCEO=45V ● Complement to BC327. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous C

Kexin
Kexin
pdf
46 BC337
NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 12

JCET
JCET
pdf
45 BC337
NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 1 TO-92  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free BC337L-xx-T92-B BC337G-xx-T92-B BC337L-xx-T92-K BC337G-xx-T92-K BC338L-xx-T92-B

UTC
UTC
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