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Datasheet BB304A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB304A | Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Silicon Variable Capacitance Diode
Preliminary Data
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BB 304A
For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal Hifi tuning device when used in Low-distortion back-to back configuration Color-coded capacitance s |  Siemens Group | diode |
BB3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB301 | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB301C
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-507 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand  Hitachi amplifier | | |
| 2 | BB301 | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB301C
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-507 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand Hitachi amplifier | | |
| 3 | BB301C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB301C
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-507 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand Hitachi amplifier | | |
| 4 | BB301M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB301M
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-506 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
| 5 | BB302C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB302C
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-573 A (Z) 2nd. Edition September 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorb Hitachi amplifier | | |
| 6 | BB302M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB302M
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-572 A (Z) 2nd. Edition September 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorb Hitachi amplifier | | |
| 7 | BB304 | Silicon Epitaxial Planar Dual Capacitance Diodes http://www.Datasheet4U.com
 Telefunken diode | |
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