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Datasheet BAW56W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BAW56WSWITCHING DIODE

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Diode BAW56W SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-32
Transys
Transys
diode
2BAW56WSmall Signal Switching Diode

Elektronische Bauelemente BAW56W Small Signal Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: KJC 3 12 ABSOLUTE MAXIMUM RATINGS (Single diode @ TA
SeCoS
SeCoS
diode
3BAW56WSWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode BAW56W SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: KJC KJC KJC Solid dot = Green molding compound device, if none,the normal device.
JCET
JCET
diode
4BAW56WDIODE

RoHS BAW56W SOT-323 Plastic-Encapsulate DIODE BAW56W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡
WEJ
WEJ
diode
5BAW56WHigh-speed double diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode FEATURES • Very small plastic SMD package • High switching speed:
Philipss
Philipss
diode


BAW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BAW100SILICON SWITCHING DIODES

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1
Central Semiconductor
Central Semiconductor
diode
2BAW100Silicon Switching Diode Array

SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o
Kexin
Kexin
diode
3BAW100Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)

Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAW 100 Type BAW 100 Marking JSs Ordering Code (tape and reel) Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward
Siemens Group
Siemens Group
diode
4BAW100GSILICON SWITCHING DIODES

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1
Central Semiconductor
Central Semiconductor
diode
5BAW101DUAL SURFACE MOUNT SWITCHING DIODE

NEW PRODUCT Features • Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) BAW101 DUAL SURFACE MOUNT SWITCHING D
Diodes
Diodes
diode
6BAW101Silicon Switching Diode Array

SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power
Kexin
Kexin
diode
7BAW101High Voltage Double Diode

BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes. Pb Lead-free APPLICATIONS z General application. ORDERING INFORMATION Type No. Marking BAW101 AB SOT-143 Package Code SOT-143 MAXIMUM RATING @
LGE
LGE
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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