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Datasheet BAW56W Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAW56W | SWITCHING DIODE Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
BAW56W SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃) Collector current
IO: 150 mA Collector-base voltage
VR: 75 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-32 | Transys | diode |
2 | BAW56W | Small Signal Switching Diode Elektronische Bauelemente
BAW56W
Small Signal Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
MARKING: KJC
3 12
ABSOLUTE MAXIMUM RATINGS (Single diode @ TA | SeCoS | diode |
3 | BAW56W | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
BAW56W SWITCHING DIODE
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
MARKING: KJC
KJC
KJC
Solid dot = Green molding compound device, if none,the normal device.
| JCET | diode |
4 | BAW56W | DIODE RoHS BAW56W SOT-323 Plastic-Encapsulate DIODE
BAW56W SWITCHING DIODE
DFEATURES TPower dissipation
.,LPD: 200 mW (Tamb=25℃)
Collector current
IO: 150 mA
OCollector-base voltage VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-323
1. 25¡ | WEJ | diode |
5 | BAW56W | High-speed double diode DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAW56W High-speed double diode
Product specification Supersedes data of 1996 Sep 17 1999 May 11
Philips Semiconductors
Product specification
High-speed double diode
FEATURES • Very small plastic SMD package • High switching speed: | Philipss | diode |
BAW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAW100 | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
2 | BAW100 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o Kexin diode | | |
3 | BAW100 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes
q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward Siemens Group diode | | |
4 | BAW100G | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
5 | BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2)
BAW101
DUAL SURFACE MOUNT SWITCHING D Diodes diode | | |
6 | BAW101 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW101
Features
Electrically insulated high-voltage medium-speed diodes
Diodes
Unit: mm
A bsolute M axim um R atings T a = 25
Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power Kexin diode | | |
7 | BAW101 | High Voltage Double Diode BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code SOT-143
MAXIMUM RATING @ LGE diode | |
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