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Datasheet BAW56HDW Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAW56HDW | SURFACE MOUNT SWITCHING DIODE ARRAY ADVANCED INFORMATION
Features
Fast Switching Speed High Reverse Breakdown Voltage Low Leakage Current Low Capacitance For General Purpose Switching Applications Two “BAW56” Circuits In One Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and | Diodes | diode |
2 | BAW56HDWQ | SURFACE MOUNT SWITCHING DIODE ARRAY Features
Fast Switching Speed High Reverse Breakdown Voltage Low Leakage Current Low Capacitance Two “BAW56” Circuits in One Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Notes 3) Qualified to AEC-Q10 | Diodes | diode |
BAW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAW100 | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
2 | BAW100 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o Kexin diode | | |
3 | BAW100 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes
q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward Siemens Group diode | | |
4 | BAW100G | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
5 | BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2)
BAW101
DUAL SURFACE MOUNT SWITCHING D Diodes diode | | |
6 | BAW101 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW101
Features
Electrically insulated high-voltage medium-speed diodes
Diodes
Unit: mm
A bsolute M axim um R atings T a = 25
Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power Kexin diode | | |
7 | BAW101 | High Voltage Double Diode BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code SOT-143
MAXIMUM RATING @ LGE diode | |
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