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Datasheet BAW156 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAW156 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance |  Pan Jit International | diode |
| 2 | BAW156 | Three Terminals SMD Low Leakage Switching Diode Three Terminals SMD Low Leakage Switching Diode BAS116/BAW156/BAV170/BAV199
Three Terminals SMD Low Leakage Switching Diode
Features
• Surface mount package ideally suited for automatic insertion • Very low leakage current • Low capacitance • RoHS Compliant
Mechanical Data
Case: Terminals |  TAITRON | diode |
| 3 | BAW156 | Low-leakage double diode DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAW156 Low-leakage double diode
Product specification Supersedes data of 1996 Mar 13 1999 May 11
Philips Semiconductors
Product specification
Low-leakage double diode
FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA � |  Philipss | diode |
| 4 | BAW156 | Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) Silicon Low Leakage Diode Array
Low-leakage applications q Medium speed switching times q Common anode
q
BAW 156
Type BAW 156
Marking JZs
Ordering Code (tape and reel) Q62702-A922
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current |  Siemens Group | diode |
| 5 | BAW156 | Introducing Very Low Leakage SOT-23 Diodes: New Product Announcement
May 2001
Introducing Very Low Leakage SOT-23 Diodes:
BAS116, BAV170, BAV199, BAW156!
A
SOT-23
B
TOP VIEW
C
Dim A
Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
E
D G H
B C D
K J L M
E G H J |  Diodes Incorporated | diode |
BAW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAW100 | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1  Central Semiconductor diode | | |
| 2 | BAW100 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o  Kexin diode | | |
| 3 | BAW100 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes
q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward Siemens Group diode | | |
| 4 | BAW100G | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
| 5 | BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2)
BAW101
DUAL SURFACE MOUNT SWITCHING D  Diodes diode | | |
| 6 | BAW101 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW101
Features
Electrically insulated high-voltage medium-speed diodes
Diodes
Unit: mm
A bsolute M axim um R atings T a = 25
Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power Kexin diode | | |
| 7 | BAW101 | High Voltage Double Diode BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code SOT-143
MAXIMUM RATING @  LGE diode | |
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