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Datasheet BAV21 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAV21 | High Voltage Switching Diode Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and
lead | Taiwan Semiconductor | diode |
2 | BAV21 | High Voltage Surface Mount Switching Diode BAV19/BAV20/BAV21
High Voltage Surface Mount Switching Diode
DO-35
Features
Fast switching speed General purpose rectification Silicon epitaxial planar construction
Mechanical Data
Case: DO-35 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.)
Dimensions | LGE | diode |
3 | BAV21 | Small Signal Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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BAV19 THRU BAV21
Features
• Silicon Epitaxial Planar Diodes • For General Purpose • This diode is also available in other case. • Lead Fre | MCC | diode |
4 | BAV21 | SWITCHING DIODES 3.0
BAV19~BAV21
SWITCHING DIODES
VOLTAGE 120~250 Volts POWER 500 mWatts FEATURES
• Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance • Axial lead Package ldeally Suited for Automatic lnsertion. • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL | Pan Jit International | diode |
5 | BAV21 | SILICON EPITAXIAL PLANAR DIODES BAV19, BAV20, BAV21
SILICON EPITAXIAL PLANAR DIODES
High Voltage General Purpose Diodes
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak | SEMTECH | diode |
BAV Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAV10 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV10 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 16
Philips Semiconductors
Product specification
High-speed diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6 NXP Semiconductors diode | | |
2 | BAV100 | Silicon Epitaxial Planar Diodes SURGE diode | | |
3 | BAV100 | Hermetically Sealed Glass High Voltage Switching Diodes Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are cor Taiwan Semiconductor diode | | |
4 | BAV100 | Small Signal Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
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Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Moisture Sensitivity Leve MCC diode | | |
5 | BAV100 | HIGH SPEED SILICON DIODES Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101 BAV102, BAV103
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and Gener CDIL diode | | |
6 | BAV100 | Surface Mount Small Signal Switching Diode Elektronische Bauelemente
BAV100 ~ BAV103
Surface Mount Small Signal Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOD-80 (Mini-MELF) Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction SeCoS diode | | |
7 | BAV100 | Ultrafast silicon rectifier diodes BAV 100...BAV 103
Surface mount diode
Ultrafast silicon rectifier diodes
BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V
Features
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Semikron rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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