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Datasheet BAS70-07S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAS70-07S | General-purpose Schottky diodes BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
Rev. 09 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
1 |  NXP Semiconductors | diode |
| 2 | BAS70-07S | RF DETECTION DIODE
®
BAS70-07S / BAS70-08S
RF DETECTION DIODE
FEATURES AND BENEFITS
s
s
s
LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE
DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF application for |  ST Microelectronics | diode |
BAS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
VOLTAGE 100 Volts
FEATURES
• Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICA  Pan Jit International diode | | |
| 2 | BAS101 | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 3 | BAS101S | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 4 | BAS11 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o NXP Semiconductors rectifier | | |
| 5 | BAS116 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES z Low leakage current applications z Medium speed switching times
MARKING: JV
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re  JCET diode | | |
| 6 | BAS116 | LOW LEAKAGE SWITCHING DIODE BAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetiti  SEMTECH diode | | |
| 7 | BAS116 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance Pan Jit International diode | |
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