No | Part number | Description ( Function ) | Manufacturers | |
38 | BAS40W | Schottky barrier double diodes DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAS40W series Schottky barrier (double) diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES • Low forward voltage • Guard ring protected • Very small SMD package • Low diode capacitance. APPLICATIONS � |
NXP Semiconductors |
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37 | BAS40W | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) Silicon Schottky Diode q q q q BAS 40W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702-A1065 Q62702-A1066 Q62702-A1067 Pin Configuration 1 2 3 A1 A1 C1 C1 A2 C2 Marking Package1) BAS 40-04W BAS 40-05W BAS 40-06W C1/A2 44s C1/C2 45s A1/A2 46s SOT-323 Maximum R |
Siemens Semiconductor Group |
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36 | BAS40W | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) BAS40W /-04 /-05 /-06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Mechanical Data • Case: SOT323 • Case Mat |
Diodes Incorporated |
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35 | BAS40W | Surface Mount Schottky Diodes Surface Mount Schottky Diodes P b Lead(Pb)-Free Features: * Low forward voltage * Fast switching * Ultra-Small Surface Mount Package Mechanical Data: * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See Diagrams Page.2 * Marking: See Diagrams Page.2 * Weight: 0.006 grams (approx) BAS40W/-04/-05/-06 SCHOTTKY DIODES 200m AMPERES 40 VOLTS 3 1 2 SOT-323(SC-70) SOT- |
WEITRON |
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34 | BAS40W | SCHOTTKY DIODE BAS40W SERIES SCHOTTKY DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 200 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1. 01 REF BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Ma |
Transys |
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33 | BAS40W | Schottky Diode BAS40W/-04/-05/-06 Schottky Diode SOT-323 Features Low Forward Voltage Fast Switching Dimensions in inches and (millimeters) BAS40W MARKING: 43• BAS40W-06 MARKING: 46 Maximum Ratings @TA=25℃ BAS40W-05 MARKING:45 BAS40W-04 MARKING:44 Parameter Symbol Limits Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage Forward contin |
LGE |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |