| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | B950A | PNP Transistor - 2SB950A Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one |
 Panasonic Semiconductor |
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Recommended search results related to B950A |
| Part No | Description ( Function) | Manufacturers | |
| 2SB950 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transf |
Panasonic Semiconductor |
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| 2SB950 | Power Transistors Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • Hi |
Panasonic Semiconductor |
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| 2SB950A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transf |
Panasonic Semiconductor |
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| 2SB950A | Power Transistors Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • Hi |
Panasonic Semiconductor |
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| 2SB950A | Silicon PNP Darlington Power Transisto INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB950A DESCRIPTION ·High DC Current Gain: hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A APPLICATIONS ·Designed for power amplifier and switching app |
 Inchange Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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