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B1238 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 B1238
2SB1238

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current

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B12 Data sheets

Part No Description ( Function) Manufacturers PDF
B1274   2SB1274

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier.

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
B1243   2SB1243

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal d

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B1237   2SB1237

Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal

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