No | Part number | Description ( Function ) | Manufacturers | |
1 | APT10M09B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVR • Identical |
Advanced Power Technology |
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Part No | Description ( Function) | Manufacturers | |
APT10M09B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10M09B2VFR APT10M09LVFR POWER MOS V ® FREDFET B2VFR 100V 100A 0.009W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS |
Advanced Power Technology |
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M5M410092BRF | 3D-RAM (M5M410092B) Contents 1 Overview of 3D-RAM and Its Functional Blocks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frame Buffer Design Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |