| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | APT10086SLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT10086BLC APT10086SLC 1000V 13A 0.860W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. |
 Advanced Power Technology |
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Recommended search results related to APT10086SLC |
| Part No | Description ( Function) | Manufacturers | |
| APT10086BLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT10086BLC APT10086SLC 1000V 13A 0.860W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charg |
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| APT10086BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10086BVFR 1000V 13A 0.860Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also |
Advanced Power Technology |
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| APT10086BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10086BVR 1000V 13A 0.860Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
Advanced Power Technology |
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| APT10086SVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10086SVR 1000V 13A 0.860Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
Advanced Power Technology |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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