No | Part number | Description ( Function ) | Manufacturers | |
1 | APT10043JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10043JVR 1000V 22A 0.430Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • |
Advanced Power Technology |
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Part No | Description ( Function) | Manufacturers | |
APT10043 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10043JVR 1000V 22A 0.430Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f |
Advanced Power Technology |
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1SCA100431R1001 | neutral and earth terminals
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ABB |
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PTF10043 | 12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surf |
Ericsson |
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R6100430 | General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
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SM10043 | Electromagnets SMElectromagnets SERIES ELECTROMAGNET ∅A B HOLE WEIGHT TYPE (mm) C (Kg) SM1721 17 21 M3 0.023 SM2015 20 15 M3 0.025 SM2020 20 20 M3 0.05 SM2520 25 20 M5 0.07 SM3020 30 20 M6 0.10 SM3025 30 25 M6 0.13 SM3032 30 32 M4 0.14 SM3232 32 32 M6 0.15 SM3251 |
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Part Number | Function | Manufacturers | |
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