No | Part number | Description ( Function ) | Manufacturers | |
1 | APT10040B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10040B2VFR APT10040LVFR POWER MOS V ® FREDFET B2VFR 1000V 25A 0.400W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVFR |
Advanced Power Technology |
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Part No | Description ( Function) | Manufacturers | |
APT10040B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT10040B2VR APT10040LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching |
Advanced Power Technology |
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D10040200GT | Product Specification Product Specification D10040200GT GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Lo |
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D10040200GTH | GaAs Power Doubler Product Specification D10040200GTH GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability L |
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D10040200PL1 | 45-1000MHz GaAs/GaN PWR DBLR HYBRID D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated |
RF Micro Devices |
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D10040220GT | GaAs Power Doubler Product Specification D10040220GT GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |