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APT10040B2VFR PDF Datasheet

The APT10040B2VFR is Power Mos V Is A New Generation Of High Voltage. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 APT10040B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10040B2VFR APT10040LVFR POWER MOS V ® FREDFET B2VFR 1000V 25A 0.400W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVFR

Advanced Power Technology
Advanced Power Technology
pdf

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Recommended search results related to APT10040B2VFR

Part No Description ( Function) Manufacturers PDF
APT10040B2VR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT10040B2VR APT10040LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching

Advanced Power Technology
Advanced Power Technology
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D10040200GT   Product Specification

Product Specification D10040200GT GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Lo

PDI
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D10040200GTH   GaAs Power Doubler

Product Specification D10040200GTH GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability L

PDI
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D10040200PL1   45-1000MHz GaAs/GaN PWR DBLR HYBRID

D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated

RF Micro Devices
RF Micro Devices
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D10040220GT   GaAs Power Doubler

Product Specification D10040220GT GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un

PDI
PDI
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[1]    

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