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Datasheet APT1004 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
19 APT1004   N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-254 G S APT1004RCN 1000V 3.6A 4.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT1004RCN UNIT Volts Amps 1000 3.6 14.4 ±3
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datasheet APT1004 pdf
18 APT10040B2VFR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10040B2VFR APT10040LVFR POWER MOS V ® FREDFET B2VFR 1000V 25A 0.400W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f
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Advanced Power Technology
datasheet APT10040B2VFR pdf
17 APT10040B2VR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT10040B2VR APT10040LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through opti
Advanced Power Technology
Advanced Power Technology
datasheet APT10040B2VR pdf
16 APT10040LVFR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10040B2VFR APT10040LVFR POWER MOS V ® FREDFET B2VFR 1000V 25A 0.400W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f
Advanced Power Technology
Advanced Power Technology
datasheet APT10040LVFR pdf


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Número de pieza Descripción Fabricantes PDF
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