No | Part number | Description ( Function ) | Manufacturers | |
2 | APT1002R4BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT1002RBN ® 1000V 7.0A 2.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unless otherwise specified. APT 1002RBN APT 1002R4BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 7.0 28 ±30 240 1.96 1000 6.5 26 Continuous |
Advanced Power Technology |
|
1 | APT1002R4BN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET
|
Advanced Power Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |