No | Part number | Description ( Function ) | Manufacturers | |
1 | APT10025JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10025JVR 1000V 34A 0.250Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • |
Advanced Power Technology |
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Part No | Description ( Function) | Manufacturers | |
APT10025JLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT10025JLC 1000V 34A S G D 0.250W S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
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APT10025JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10025JVFR 1000V 34A 0.250Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also |
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APT10025PVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10025PVR 1000V 33A 0.250Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
Advanced Power Technology |
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Mospec Semiconductor |
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