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Datasheet APT1001RSLC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | APT1001RSLC | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
Advanced Power Technology |
APT1001R Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
APT1001RBN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
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APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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APT1001RSVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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