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Datasheet APT1001RBN Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 APT1001RBN   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN U
 Advanced Power Technology
Advanced Power Technology		 datasheet APT1001RBN pdf

APT1001 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
APT1001RBN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise spec
 Advanced Power Technology
Advanced Power Technology		 datasheet pdf - Advanced Power Technology
APT1001

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
 Advanced Power Technology
Advanced Power Technology		 datasheet pdf - Advanced Power Technology
APT1001

Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
 Advanced Power Technology
Advanced Power Technology		 datasheet pdf - Advanced Power Technology


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Número de pieza Descripción Fabricantes PDF
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