No | Part number | Description ( Function ) | Manufacturers | |
1 | APT1001R6BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001R6BN APT 1002R4BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 8 32 ±30 240 1.96 1000 6.5 26 Continuous |
Advanced Power Technology |
0  1  2  3  4  5  6  7  8 9 |
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