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Datasheet APT1001R3BN Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | APT1001R3BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M |
Advanced Power Technology |
APT1001R Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
APT1001RBN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
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APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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APT1001RSVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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Número de pieza | Descripción | Fabricantes | |
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