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APT1001 PDF Datasheet

The APT1001 is N-channel Enhancement Mode High Voltage Power MOSFETs, Power Mos Vi. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
15 APT1001
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast sw

Advanced Power Technology
Advanced Power Technology
pdf
14 APT1001
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast sw

Advanced Power Technology
Advanced Power Technology
pdf
13 APT1001R1AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-3 • Faster Switching • Lower Leakage • 100%

Advanced Power Technology
Advanced Power Technology
pdf
12 APT1001R1BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 10.5 42 ± 30 310 2.48 1000 10 40 Continu

Advanced Power Technology
Advanced Power Technology
pdf
11 APT1001R1BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • L

Advanced Power Technology
Advanced Power Technology
pdf
10 APT1001R1HVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. V® • Faster Switching • Lower Leakage •

Advanced Power Technology
Advanced Power Technology
pdf

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