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Datasheet APT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2220 | APT05DC120HJ | SiC Diode Full Bridge Power Module APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Te |
 Microsemi |
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| 2219 | APT06DC60HJ | SiC Diode Full Bridge Power Module APT06DC60HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 600V IC = 6A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temp |
Microsemi |
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| 2218 | APT1001 | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
 Advanced Power Technology |
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| 2217 | APT1001 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
Advanced Power Technology |
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