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No Part number Description ( Function ) Manufacturers PDF
2220 APT05DC120HJ
SiC Diode Full Bridge Power Module

APT05DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 5A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on V

Microsemi
Microsemi
pdf
2219 APT06DC60HJ
SiC Diode Full Bridge Power Module

APT06DC60HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF

Microsemi
Microsemi
pdf
2218 APT1001
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast sw

Advanced Power Technology
Advanced Power Technology
pdf
2217 APT1001
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast sw

Advanced Power Technology
Advanced Power Technology
pdf
2216 APT1001R1AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-3 • Faster Switching • Lower Leakage • 100%

Advanced Power Technology
Advanced Power Technology
pdf
2215 APT1001R1BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 10.5 42 ± 30 310 2.48 1000 10 40 Continu

Advanced Power Technology
Advanced Power Technology
pdf



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