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AO4414L PDF Datasheet

The AO4414L is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
11 AO4410
30V N-Channel MOSFET

AO4410 30V N-Channel MOSFET General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Product Summary VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf
10 AO4411
P-Channel Enhancement Mode Field Effect Transistor

AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) The AO4411 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applicati

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf
9 AO4412
N-Channel Enhancement Mode Field Effect Transistor

AO4412 N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 8.5A (V GS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) The AO4412 uses advanced trench technology to excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf
8 AO4413
P-Channel Enhancement Mode Field Effect Transistor

June 2002 AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf
7 AO4413A
P-Channel Enhancement Mode Field Effect Transistor

AO4413A P-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) The AO4413A uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load s

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf
6 AO4414
N-Channel Enhancement Mode Field Effect Transistor

AO4414 N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) The AO4414 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
pdf

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