No | Part number | Description ( Function ) | Manufacturers | |
11 | AO4410 | 30V N-Channel MOSFET AO4410 30V N-Channel MOSFET General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Product Summary VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS |
Alpha & Omega Semiconductors |
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10 | AO4411 | P-Channel Enhancement Mode Field Effect Transistor AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) The AO4411 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applicati |
Alpha & Omega Semiconductors |
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9 | AO4412 | N-Channel Enhancement Mode Field Effect Transistor AO4412 N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 8.5A (V GS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) The AO4412 uses advanced trench technology to excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow |
Alpha & Omega Semiconductors |
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8 | AO4413 | P-Channel Enhancement Mode Field Effect Transistor June 2002 AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = - |
Alpha & Omega Semiconductors |
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7 | AO4413A | P-Channel Enhancement Mode Field Effect Transistor AO4413A P-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) The AO4413A uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load s |
Alpha & Omega Semiconductors |
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6 | AO4414 | N-Channel Enhancement Mode Field Effect Transistor AO4414 N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) The AO4414 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source |
Alpha & Omega Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |