No | Part number | Description ( Function ) | Manufacturers | |
1 | AGB3302 | 50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 50W High Linearity Low Noise Wideband Gain Block Data Sheet - Rev 2.0 AGB3302 FEATURES DC-5300 MHz Operation Bandwidth +36 dBm Output IP3 4.5 dB Noise Figure at 850 MHz 16 dB Gain at 850 MHz +18 dBm P1dB SOT-89 Package Single +8 V to +12 V Supply Case Temperature: -40 to +85 °C APPLICATIONS Cellular Base Stations for W-CDMA, CDMA, TDMA |
ANADIGICS |
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2SK3302 | Silicon N Channel MOS Type Field Effect Transistor 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low |
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