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AD-0809 PDF Datasheet

The AD-0809 is 8 Channel Ad Conversion. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 AD-0809
8 Channel AD Conversion

AD-0809 8 Channel AD Conversion Fitur: 8 Channel Multiplex Analog Input 0 – 5 Volt Analog Input 4 Interrupt Output Selector 4 Address Selector Kompatibel DST-51 Minimum System & SC-51 Free Running & Controlled Mode Adjustable Voltage Reference DELTA ELECTRONIC http://www.delta-electronic.com http:// Deskripsi AD-0809 adal ah modul y ang di gunakan untuk

DELTA ELECTRONIC
DELTA ELECTRONIC
pdf

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R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz

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0809LD30   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

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0809LD30P   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes

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0809LD60   60 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

GHZ Technology
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0809LD60P   60 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes

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