PNP TRANSISTOR -100mA A733 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Voltage BVebo -5 V Ie=50£g A Collector-Base Leakage Icbo -0.1 uA Vcb=

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR(PNP ) TO-92 FEATURE Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Te

A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Ratin

AiT Semiconductor Inc.   www.ait-ic.com A7336 600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO POWER MANAGEMENT UNIT (PMU) DESCRIPTION The A7336 is a complex power management, which can provide two roads of low-noise high-speed LDOs and high efficiency reached 95% of the DC-DC buck. As the use of CMOS process realization of the work of the chip consumes very little current, the i

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit : mm TRANSISTOR£¨PNP £© SOT¡ª 23 1. BASE 2. EMITTER 3