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A1SHB PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
6 A1SHB
P-Channel Trench Power MOSFET

P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application. HM2301B Features ● VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 230mΩ @ VGS =-

H&M Semiconductor
H&M Semiconductor
pdf
5 A1SHB
P-Channel Power MOSFE

P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone

TOPSKY
TOPSKY
pdf
4 A1SHB
P-Channel Enhancement Mode Power MOSFET

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D

Bruckewell
Bruckewell
pdf
3 A1SHB
P-Channel Enhancement Mode MOSFET

FANGJING P-Channel Enhancement Mode MOSFET FL2301A Features z -20V/-2.5A, RDS(ON)= 90mΩ (typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V z Super High Dense Cell Design z Reliable and Rugged Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Pin Description Top View D 2 13 GS SOT-23 S G D P Channel MOSFET Ordering an

FANGJING
FANGJING
pdf
2 A1SHB
P-Channel Enhancement mode Field Effect Transistor

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS SLS 2301 (P-Channel Enhancement mode) 印章/MARKING:A1SHB 特点/Features: 1、 开关速度快; 2、 导通电阻低; 用途/Applications: 用于一般开关和低压电源电路。 极限参数/Absolute maximum ratings(Ta=25℃) 参数/Parameter 漏极-源

SLS SEMICONDUCTOR
SLS SEMICONDUCTOR
pdf
1 A1SHB
P-Channel 20-V(D-S) MOSFET

SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Cont

YANGJING
YANGJING
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