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Datasheet A1SHB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | A1SHB | P-Channel Power MOSFE P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These de |
 TOPSKY |
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| 5 | A1SHB | P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless ot |
 YANGJING |
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| 4 | A1SHB | P-Channel Enhancement mode Field Effect Transistor SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
SLS 2301 (P-Channel Enhancement mode)
印章/MARKING:A1SHB
特点/Features： 1、 开关速度快； 2、 导通电阻低；
用途/Applications： 用于一般开关和低压电源电路� |
 SLS SEMICONDUCTOR |
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| 3 | A1SHB | P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET
General Description
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
HM2301B
Features
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 H&M Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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