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A1931 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 A1931
Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage

Toshiba
Toshiba
pdf

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A19 Data sheets

Part No Description ( Function) Manufacturers PDF
A1972   2SA1972

Datasheet39.com 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter volt

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
A1941   POWER TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 (9TW) (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VA

CDIL
CDIL
datasheet pdf
A1941    2SA1941

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maxi

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf


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