A1516 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | A1516 | SILICON PNP TRANSISTOR INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE |
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A15 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| A1568 | 2SA1568 Built-in Diode at C–E Low VCE (sat) 2SA1568 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–1V, IC=–6A IC=–6A, IB=–0.3A IECO=–10A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz (Ta=25°C) 2SA1568 |
 Sanken electric |
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| A1516 | SILICON PNP TRANSISTOR INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applicati |
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| A1512 | 2SA1512 Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 s Features q Low collector to emitter saturation voltage VCE(sat). q Optimum for low-voltage operation and for converters. q Allowing supply with the radial tapi |
 Panasonic Semiconductor |
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