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A1015 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
10 A1015
Silicon PNP Transistor

A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350um×350u

Shanghai
Shanghai
pdf
9 A1015
Silicon PNP Epitaxial Type Transistor

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low n

Toshiba Semiconductor
Toshiba Semiconductor
pdf
8 A1015
PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipatio

Jiangsu Changjiang
Jiangsu Changjiang
pdf
7 A1015
PNP SILICON TRANSISTOR

Micro Electronics
Micro Electronics
pdf
6 A1015
PNP general purpose transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCR

NXP
NXP
pdf
5 A1015
PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitt

Unisonic Technologies
Unisonic Technologies
pdf



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