| No | Part number | Description ( Function ) | Manufacturers | |
| 10 | A1015 | 150mA,50V, PNP TRANSISTOR, 2SA1015 UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitt |
 Unisonic Technologies |
|
| 9 | A1015 | 50V, 150mA, Silicon PNP Epitaxial Type Transistor 2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low n |
 Toshiba Semiconductor |
|
| 8 | A1015 | Photo Interrupters Transmissive Photosensors (Photo Interrupters) CNA1015 Photo Interrupters Overview (2.5) Unit : mm 14.0 5.0±0.15 A 0.5±0.1 Device center 5.0 (C1) 10.0 min. 2.5 CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light |
 Panasonic Semiconductor |
|
| 7 | A1015 | PNP general purpose transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCR |
 NXP Semiconductors |
|
| 6 | A1015 | LOW FREQUENCY AMPLIFIER KSA1015 KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ba |
 Fairchild Semiconductor |
|
| 5 | A1015 | 50V, 150mA, PNP EPITAXIAL PLANAR TRANSISTOR |
 Hi-Sincerity Mocroelectronics |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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