No | Part number | Description ( Function ) | Manufacturers | |
2 | A1002 | Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT |
INCHANGE |
|
1 | A1002 | PNP Transistor - 2SA1002 •crTVf 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , line. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1002 DESCRIPTION • High Current Capability • Collector-Emitter Breakdown Voltage- :V(BR)cEO=-120V(Min.) APPLICATIONS • Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) S |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |